The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Dec. 14, 2018
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A silicon carbide semiconductor device includes a silicon carbide substrate and a gate insulating film. The silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The gate insulating film is provided on the first main surface. The silicon carbide substrate includes a first body region having p type, a second body region having p type, and a JFET region provided between the first body region and the second body region and having n type. The JFET region has both a first impurity capable of providing the p type and a second impurity capable of providing the n type. A concentration of the second impurity is higher than a concentration of the first impurity. The silicon carbide semiconductor device capable of suppressing dielectric breakdown of the gate insulating film is provided.