The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Sep. 26, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seok Hoon Kim, Suwon-si, KR;
Hyun Jung Lee, Suwon-si, KR;
Kyung Hee Kim, Pyeongtaek-si, KR;
Sun Jung Kim, Suwon-si, KR;
Jin Bum Kim, Seoul, KR;
Il Gyou Shin, Hwaseong-si, KR;
Seung Hun Lee, Hwaseong-si, KR;
Cho Eun Lee, Pocheon-si, KR;
Dong Suk Shin, Yongin-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
There is provided a semiconductor device capable of enhancing short channel effect by forming a carbon-containing semiconductor pattern in a source/drain region. The semiconductor device includes a first gate electrode and a second gate electrode spaced apart from each other on a fin-type pattern, a recess formed in the fin-type pattern between the first gate electrode and the second gate electrode, and a semiconductor pattern including a lower semiconductor film formed along a profile of the recess and an upper semiconductor film on the lower semiconductor film, wherein the lower semiconductor film includes a lower epitaxial layer and an upper epitaxial layer sequentially formed on the fin-type pattern, and a carbon concentration of the upper epitaxial layer is greater than a carbon concentration of the lower epitaxial layer.