The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Dec. 15, 2017
Applicant:
Boe Technology Group Co., Ltd., Beijing, CN;
Inventor:
Pengfei Gu, Beijing, CN;
Assignee:
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/32 (2006.01); G09G 3/3291 (2016.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); G09G 3/3258 (2016.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3262 (2013.01); G09G 3/3258 (2013.01); G09G 3/3291 (2013.01); H01L 21/266 (2013.01); H01L 27/14603 (2013.01); H01L 27/3265 (2013.01); H01L 27/3276 (2013.01); H01L 29/66757 (2013.01); H01L 29/7831 (2013.01); H01L 29/78645 (2013.01);
Abstract
A light emitting circuit and a driving method thereof, an electronic device, a double-gate thin film transistor and a manufacture method thereof are provided. The light emitting circuit includes a double-gate thin film transistor and a light emitting component, the double-gate thin film transistor includes a first gate electrode, a second gate electrode, a first electrode and a second electrode, and where only both the first gate electrode and the second gate electrode receive turn-on signals simultaneously, the double-gate thin film transistor is turned on to drive the light emitting component.