The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Aug. 03, 2016
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Tetsuji Yamaguchi, Kanagawa, JP;

Satoshi Keino, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/30 (2006.01); H01L 27/146 (2006.01); H01L 51/42 (2006.01); H01L 51/44 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); H01L 27/1463 (2013.01); H01L 27/14623 (2013.01); H01L 27/14647 (2013.01); H01L 51/4253 (2013.01); H01L 51/442 (2013.01); H01L 27/14636 (2013.01); H01L 27/14692 (2013.01);
Abstract

Solid-state imaging devices, electronic apparatuses, and methods of forming image sensors are provided. A solid-state imaging device or an electronic apparatus incorporating a solid-state imaging device can include a substrate and at least a first photoelectric conversion element formed in the substrate. In addition, a region with a low dielectric constant is formed. The region can include a locally thin region formed in the substrate. An insulating film is at the first side of the substrate. Where the region includes a locally thin region, the interlayer insulating film can extend into that locally thin region. A first electrode is at a side of the interlayer insulating film opposite the substrate. The device further includes a second electrode, and a photoelectric conversion layer at least partially between the first electrode and the second electrode.


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