The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jun. 30, 2016
Omnivision Technologies, Inc., Santa Clara, CA (US);
Takayuki Goto, Foster City, CA (US);
Dajiang Yang, San Jose, CA (US);
Keiji Mabuchi, Los Altos, CA (US);
Sohei Manabe, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor includes a substrate and a plurality of infrared pixels formed in a front side of the substrate and configured to detect infrared light incident on the front side of the substrate. Each of the infrared pixels includes a photodiode, a region free of implants located above the photodiode, and a photogate formed over the substrate and above the photodiode. The image sensor also includes a plurality of color pixels dispersed among the infrared pixels, where each of the color pixels includes a pinned photodiode and is configured to detect visible light. The photodiode of each of the infrared pixels can include a deep charge-accumulation region underlying the pinned photodiode(s) of one or more neighboring color pixel(s). Methods of manufacturing also described and include forming the deep charge-accumulation regions and associated elements prior to forming any implant-blocking elements (e.g., polysilicon photogates) over the substrate.