The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Nov. 21, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Chongqing Boe Optoelectronics Technology Co., Ltd., Chongqing, CN;
Xiaoyuan Wang, Beijing, CN;
Ni Yang, Beijing, CN;
Yan Fang, Beijing, CN;
Zhijian Qi, Beijing, CN;
Shaoru Li, Beijing, CN;
BOE Technology Group Co., Ltd., Beijing, CN;
Chongqing BOE Optoelectronics Technology Co., Ltd., Chongqing, CN;
Abstract
A thin film transistor comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode. The drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode. A first portion of the active layer between the first sub-drain electrode and the source electrode and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively. The first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel. A channel length of the auxiliary channel is less than or equal to a channel length of the primary channel.