The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

May. 28, 2018
Applicant:

Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;

Inventor:

Zih-Song Wang, Nantou County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11578 (2017.01); H01L 27/1157 (2017.01); H01L 29/10 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11578 (2013.01); H01L 21/762 (2013.01); H01L 27/1157 (2013.01); H01L 29/0649 (2013.01); H01L 29/1087 (2013.01);
Abstract

An integrated circuit structure including a substrate, a stacked structure, and first contacts is provided. The stacked structure is disposed on the substrate and includes first dielectric layers and conductive layers alternately stacked. The stacked structure has openings passing through the conductive layers. The first contacts are located in the openings. Bottoms of the first contacts are located at different heights. The first contacts and the conductive layers are electrically connected in a one-to-one manner. The first contacts and the conductive layers that are not electrically connected to each other are isolated from each other.


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