The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Dec. 06, 2016
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Hyun Song, Hwaseong-si, KR;

Yoon Suk Kim, Hwaseong-si, KR;

Kyu Baik Chang, Seoul, KR;

Ui Hui Kwon, Hwaseong-si, KR;

Yo Han Kim, Seoul, KR;

Jong Chol Kim, Seoul, KR;

Chang Wook Jeong, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 27/02 (2006.01); H01L 29/06 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 27/0207 (2013.01); H01L 27/0924 (2013.01); H01L 29/0649 (2013.01); H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01);
Abstract

A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.


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