The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

May. 11, 2018
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Jaume Roig-Guitart, Oudenaarde, BE;

Aurore Constant, Oudenaarde, BE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01C 7/12 (2006.01); H01L 29/778 (2006.01); H01L 29/8605 (2006.01); H01L 49/02 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01C 7/12 (2013.01); H01L 23/528 (2013.01); H01L 28/10 (2013.01); H01L 29/402 (2013.01); H01L 29/417 (2013.01); H01L 29/41725 (2013.01); H01L 29/66166 (2013.01); H01L 29/66431 (2013.01); H01L 29/7786 (2013.01); H01L 29/8605 (2013.01);
Abstract

In an aspect, a circuit can include drain and source terminals; a HEMT having a drain and a source, wherein the drain is coupled to the drain terminal; and a variable resistor having a first electrode and a second electrode. The first electrode can be coupled to the source of the HEMT, and the second electrode can be coupled to the source terminal. In another aspect, an electronic device can include a source terminal; a heterojunction between a channel layer and a barrier layer; a source electrode of a HEMT overlying the channel layer; a first resistor electrode overlying the channel layer and spaced apart from the source electrode, wherein the first resistor electrode is coupled to the source terminal; and a variable resistor, wherein from a top view, the variable resistor is disposed along the heterojunction between the source electrode and the first resistor electrode.


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