The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
May. 24, 2018
Renesas Electronics Corporation, Tokyo, JP;
Takashi Moriyama, Tokyo, JP;
Takashi Tonegawa, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
A semiconductor device and a method for manufacturing the semiconductor device which ensure improved reliability, permit further miniaturization, and suppress the increase in manufacturing cost. The semiconductor device includes: a pad electrode formed in the uppermost wiring layer of a multilayer wiring layer formed over a semiconductor substrate; a surface protective film formed in a manner to cover the pad electrode; an opening made in the surface protective film in a manner to expose the pad electrode partially; and a conductive layer formed over the pad electrode exposed at the bottom of the opening. The thickness of the conductive layer formed over the pad electrode is smaller than the thickness of the surface protective film formed over the pad electrode.