The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Mar. 25, 2016
Applicant:
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Inventors:
Fan Ren, Gainesville, FL (US);
Stephen J. Pearton, Gainesville, FL (US);
Assignee:
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0256 (2006.01); H01L 23/34 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 23/345 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7787 (2013.01); H01L 29/7786 (2013.01);
Abstract
Materials and methods for improving the DC and RF performance of off-state step-stressed high electron mobility transistors (HEMTs) and devices are provided. A semiconductor device can include at least one HEMT and an on-chip heating source. A method of recovering the DC and RF performance of a stressed semiconductor device can include annealing the device with a built-in heating source of the device.