The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Nov. 25, 2015
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Mikkel Høyerby, Herlev, DK;

Allan Nogueras Nielsen, Kgs. Lyngby, DK;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02M 1/08 (2006.01); H01L 21/761 (2006.01); H03F 3/217 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/761 (2013.01); H01L 21/823892 (2013.01); H01L 27/092 (2013.01); H02M 1/08 (2013.01); H03F 3/2173 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0081 (2013.01);
Abstract

A regulated high side gate driver circuit for power transistors. The regulated high side gate driver circuit includes a gate driver powered by a floating voltage regulator, which includes a linear regulating device.


Find Patent Forward Citations

Høyerby, Mikkel. (2019). Regulated high side gate driver circuit for power transistors (U.S. Patent No. 10504769). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10504769

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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