The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Apr. 10, 2012
Applicants:

Ken Okamoto, Tokyo, JP;

Tadahisa Arahori, Tokyo, JP;

Akishige Sato, Tokyo, JP;

Sachio Miyashita, Tokyo, JP;

Eiji Kusano, Ishikawa, JP;

Muneaki Sakamoto, Ishikawa, JP;

Inventors:

Ken Okamoto, Tokyo, JP;

Tadahisa Arahori, Tokyo, JP;

Akishige Sato, Tokyo, JP;

Sachio Miyashita, Tokyo, JP;

Eiji Kusano, Ishikawa, JP;

Muneaki Sakamoto, Ishikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/35 (2006.01); H01J 37/34 (2006.01); C04B 35/111 (2006.01); G11B 5/851 (2006.01); C04B 35/645 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); G11B 5/31 (2006.01); G11B 11/105 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3426 (2013.01); C04B 35/111 (2013.01); C04B 35/645 (2013.01); C23C 14/081 (2013.01); C23C 14/3414 (2013.01); G11B 5/851 (2013.01); H01J 37/3491 (2013.01); C04B 2235/656 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/663 (2013.01); C04B 2235/72 (2013.01); C04B 2235/77 (2013.01); C04B 2235/785 (2013.01); C04B 2235/786 (2013.01); C04B 2235/963 (2013.01); G11B 5/3106 (2013.01); G11B 11/10586 (2013.01); H01J 2237/332 (2013.01);
Abstract

A sputtering target which is made of an alumina sintered body having a purity of not less than 99.99% by mass %, a relative density of not less than 98%, and an average grain size of less than 5 μm or is made of an alumina sintered body having a purity of not less than 99.999% by mass % and a relative density of not less than 98%. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.


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