The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Jan. 26, 2018
Toshiba Memory Corporation, Tokyo, JP;
Kazuto Uehara, Kanagawa, JP;
Yoshikazu Harada, Kanagawa, JP;
Kenta Shibasaki, Kanagawa, JP;
Junichi Sato, Kanagawa, JP;
Akio Sugahara, Kanagawa, JP;
Toshiba Memory Corporation, Tokyo, JP;
Abstract
A non-volatile semiconductor storage device includes a memory cell array and a control circuit configured to control a data write operation for the memory cell array in a first or second write mode in response to a write command sequence. In the first write mode, the control circuit performs a first write operation, which includes an operation in which one or more bit lines are charged according to write data and an operation in which a write voltage is applied to a selected word line according to address data included in the write command sequence. In the second write mode, the control circuit performs a second write operation, which includes the operation in which the one or more bit lines are charged according to the write data and does not include the operation in which the write voltage is applied to the selected word line.