The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
May. 12, 2016
Applicant:
James Lin, New Haven, CT (US);
Inventor:
James Lin, New Haven, CT (US);
Assignee:
Alacrity Semiconductors, Inc., Branford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 11/22 (2006.01); G06F 12/0802 (2016.01); G11C 11/00 (2006.01); G11C 8/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5657 (2013.01); G06F 12/0802 (2013.01); G11C 11/005 (2013.01); G11C 11/221 (2013.01); G11C 11/225 (2013.01); G11C 8/12 (2013.01);
Abstract
MLVM is a DRAM product that has the flexibility for certain performance characteristics to change based on programming characteristics made when writing the data and the ability to write multiple bits of data at the same time. At the simplest level, this means that depending on the type of operation(s) being executed, certain more favorable characteristics can be programmed into the DRAM to get benefits over the current state of the art. The most likely benefits would be in power utilization and heat.