The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Nov. 29, 2016
Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangzhou, CN;
Yiqiang Chen, Guangzhou, CN;
Dengyun Lei, Guangzhou, CN;
Yunfei En, Guangzhou, CN;
Wenxiao Fang, Guangzhou, CN;
Lichao Hao, Guangzhou, CN;
Yun Huang, Guangzhou, CN;
Bo Hou, Guangzhou, CN;
Yudong Lu, Guangzhou, CN;
Abstract
An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Qand Qsignals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.