The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Jul. 31, 2015
Applicant:

Orthogonal, Inc., Rochester, NY (US);

Inventors:

John Andrew Defranco, Rochester, NY (US);

Charles Warren Wright, Fairport, NY (US);

Douglas Robert Robello, Webster, NY (US);

Frank Xavier Byrne, Webster, NY (US);

Diane Carol Freeman, Pittsford, NY (US);

Terrence Robert O'Toole, Webster, NY (US);

Assignee:

Orthogonal, Inc., Rochester, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/42 (2006.01); H01L 51/00 (2006.01); G03F 7/40 (2006.01); H01L 21/027 (2006.01); G03F 7/09 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
G03F 7/42 (2013.01); G03F 7/094 (2013.01); G03F 7/40 (2013.01); H01L 21/0272 (2013.01); H01L 21/0274 (2013.01); H01L 51/0018 (2013.01); H01L 51/0016 (2013.01); H01L 51/56 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract

A method of making a device includes providing a fluorinated material layer over the device substrate having one or more target areas for patterning. One or more lift-off structures are formed at least in part by developing a first pattern of one or more open areas in the fluorinated material layer in alignment with the one or more target areas by contact with a developing agent including a fluorinated solvent which dissolves the fluorinated material at a first rate. After patterning, the lift-off structures are removed by contact with a lift-off agent including a fluorinated solvent wherein the lift-off agent dissolves the fluorinated material at a second rate that is at least 150 nm/sec and higher than the first rate.


Find Patent Forward Citations

Loading…