The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 10, 2019

Filed:

Apr. 29, 2016
Applicant:

Rohm and Haas Electronic Materials Korea Ltd., Cheonan, Chungcheongnam-Do, KR;

Inventors:

Eui-Hyun Ryu, Gyeonggi-Do, KR;

Min-Kyung Jang, Seoul, KR;

Chang-Young Hong, Chungbuk, KR;

Dong-Yong Kim, Gyeonggi-Do, KR;

Dong-Je Hong, Gyeonggi-Do, KR;

Hae-Jin Lim, Yonsu-Gu, KR;

Myung Yeol Kim, Gyeonggi-Do, KR;

Hyun Jeon, Gyeonggi-Do, KR;

Assignee:

Rohm and Haas Electronic Materials Korea Ltd., Cheonan, Chungcheongnam-do, KR;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/32 (2006.01); G03F 7/30 (2006.01); G03F 7/20 (2006.01); G03F 7/039 (2006.01);
U.S. Cl.
CPC ...
G03F 7/325 (2013.01); G03F 7/0397 (2013.01); G03F 7/2041 (2013.01); G03F 7/30 (2013.01);
Abstract

New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer that comprises (i) first units comprising a nitrogen-containing moiety that comprises an acid-labile group; and (ii) second units that (1) comprise one or more hydrophobic groups and (2) are distinct from the first units.


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