The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2019
Filed:
Nov. 20, 2017
Applicant:
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Inventor:
Yanxi Ye, Guangdong, CN;
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); G02F 1/1343 (2006.01); H01L 27/12 (2006.01); G02F 1/1362 (2006.01); G02F 1/1339 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
G02F 1/13439 (2013.01); G02F 1/1368 (2013.01); G02F 1/13394 (2013.01); G02F 1/134363 (2013.01); G02F 1/136209 (2013.01); G02F 1/136227 (2013.01); H01L 27/1244 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); G02F 2001/13396 (2013.01); G02F 2001/13398 (2013.01); G02F 2001/136222 (2013.01); G02F 2201/121 (2013.01); G02F 2201/123 (2013.01);
Abstract
The present invention provides a manufacturing method of a TFT substrate and structure. The manufacturing method of the TFT substrate deposit a black photoresist on the second passivation layer (PV) and patterning to form a main integrated photoresist spacer (), a sub-photoresist spacer () and a black matrix (), then depositing a transparent conductive film on the integrated main photoresist spacer, the sub-photoresist spacer and the black matrix and patterning to form a pixel electrode () and a common electrode ().