The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 05, 2016
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Takuro Ohmaru, Fukuoka, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An imaging device that has a high degree of freedom for exposure time and is capable of taking an image with little distortion is provided. In an n-th frame period where n is a natural number of two or more, a potential of a first charge accumulation portion is reset; the first charge accumulation portion is charged with a potential in accordance with an output of a photoelectric conversion element and simultaneously, imaging data in the (n−1)-th frame that is output in accordance with a potential of a second charge accumulation portion is read; a potential of the second charge accumulation portion is reset; a potential of the first charge accumulation portion is transferred to the second charge accumulation portion, and a potential of the second charge accumulation portion is held. Through the steps, the degree of freedom for an exposure period is increased.