The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jun. 25, 2018
Tdk Corporation, Tokyo, JP;
Min Lin, Tokyo, JP;
Ken Matsuura, Tokyo, JP;
TDK CORPORATION, Tokyo, JP;
Abstract
A FET driving circuit includes: two inputs for inputting a DC voltage; two outputs respectively connected to gate and source electrodes of a FET; a switch; a resonant capacitance connected between both ends of the switch; and an LC resonance circuit connected between the inputs and both ends of the switch. When the two inputs are shorted, frequency characteristics of an impedance of the LC resonance circuit include, in order from a low to a high-frequency side, first to fourth resonant frequencies. The first resonant frequency is higher than a switching frequency of the switch, the second resonant frequency is around double the switching frequency, the fourth resonant frequency is around four times the switching frequency, and the impedance has local maxima at the first resonant frequency and the third resonant frequency and local minima at the second resonant frequency and the fourth resonant frequency.