The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
May. 23, 2018
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Sanghun Lee, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/1253 (2013.01); H01L 45/1266 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/149 (2013.01); H01L 27/2463 (2013.01);
Abstract
A resistance change memory element includes a lower electrode, a variable resistive layer disposed on the lower electrode and configured to include an oxygenated carbon structure, a barrier layer disposed on the variable resistive layer and configured to include an oxygen containable material that is able to be reversibly oxidized and reduced, and an upper electrode disposed on the barrier layer.