The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 21, 2017
Eunsun Noh, Yongin-si, KR;
Eunsun Noh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device may include a bottom electrode contact and a magnetic tunnel junction on the bottom electrode contact. The semiconductor device may include a capping insulating layer covering side surfaces of the magnetic tunnel junction. A thickness of the capping insulating layer may be larger than a vertical height of the magnetic tunnel junction. The bottom electrode contact may be in a mold insulating layer on a substrate. The semiconductor device may include a top electrode on the magnetic tunnel junction. The bottom electrode contact may include a monometallic material. The top electrode may include a conductive metal nitride. The semiconductor device may be configured to improve the measurement sensitivity of a semiconductor inspection system with regard to perpendicular magnetization characteristics of magnetic layers included in the magnetic tunnel junction.