The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Mar. 07, 2018
Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A thermoelectric conversion material includes a matrix phase configured from a semiconductor. A first grain-boundary phase and a second grain-boundary phase are provided at a grain boundary of the matrix phase. The first grain-boundary phase is configured from a material which does not form a compound with the matrix phase by a eutectic reaction, a eutectoid reaction, a peritectic reaction, a peritectoid reaction, an eccentric reaction, or a segregation reaction. The second grain-boundary phase is configured from a material having resistance which is lower than that of the matrix phase or the first grain-boundary phase. A ratio of a volume of the second grain-boundary phase to a volume of the first grain-boundary phase is smaller than 1.