The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Sep. 13, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Koichi Kokubun, Yokohama, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Abstract
A light receiving device includes: first semiconductor layers provided on a first main surface of a semiconductor substrate and having a first conductivity type impurity at a first concentration; an insulating film provided between the first semiconductor layers; a photoelectric conversion element provided in the first semiconductor layer; a first electrode provided on the insulating film; and a second electrode provided on a second main surface opposite the first main surface of the semiconductor substrate. The photoelectric conversion element includes a second semiconductor layer provided at a predetermined depth from an upper surface of the first semiconductor layer and having a second conductivity type impurity at a second concentration, and a third semiconductor layer provided within the first semiconductor layer to surround a side surface and a lower surface of the second semiconductor layer and having the first conductivity type impurity at a third concentration higher than the first concentration.