The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jul. 09, 2018
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventor:
Zhenqiang Ma, Middleton, WI (US);
Assignee:
WISCONSIN ALUMNI RESEARCH FOUNDATION, Madison, WI (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 29/861 (2006.01); H01L 29/45 (2006.01); H01L 29/737 (2006.01); H01L 29/205 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/88 (2013.01); H01L 29/1602 (2013.01); H01L 29/205 (2013.01); H01L 29/267 (2013.01); H01L 29/45 (2013.01); H01L 29/6603 (2013.01); H01L 29/66037 (2013.01); H01L 29/7378 (2013.01); H01L 29/8613 (2013.01); H01L 21/0259 (2013.01); H01L 21/0262 (2013.01); H01L 21/02488 (2013.01); H01L 21/02527 (2013.01); H01L 21/02546 (2013.01); H01L 29/0665 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01);
Abstract
P-N diodes that include p-type doped diamond and devices, such as p-n-p heterojunction bipolar transistors, that incorporate the p-n diodes are provided. In the p-n diodes, the diamond at the p-n junction has a positive electron affinity and is passivated by a thin layer of inorganic material that provides a tunneling layer that passivates the bonding interface states, without hindering carrier transport across the interface.