The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Mar. 14, 2018
Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, Tokyo, JP;
Masahito Nishigoori, Oto Tokyo, JP;
Hiroyoshi Kitahara, Yokohama Kanagawa, JP;
Yasushi Fukai, Kamakura Kanagawa, JP;
Naozumi Terada, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor portion of a first conductivity type, a first semiconductor layer and a second semiconductor layer of a second conductivity type separated from each other and provided in an upper layer portion of the semiconductor portion, a gate electrode provided on the semiconductor portion, a first contact piercing the gate electrode, a second contact piercing the gate electrode, a first insulating film provided between the first semiconductor layer and a side surface of the first contact and between the first contact and the gate electrode, and a second insulating film provided between the second semiconductor layer and a side surface of the second contact and between the second contact and the gate electrode. A lower portion of the first contact is disposed inside the first semiconductor layer, a lower end of the first contact is connected to the first semiconductor layer.