The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Apr. 02, 2018
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Ju-Youn Kim, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 27/11 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/20 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/408 (2013.01); H01L 21/823431 (2013.01); H01L 21/823456 (2013.01); H01L 21/823462 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 27/1116 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01);
Abstract
Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, a gate insulating layer formed the trench to be disposed on the deposition insulating layer, and a metal gate formed the trench on the gate insulating layer.