The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

May. 24, 2018
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Yasuyuki Hoshi, Matsumoto, JP;

Takashi Shiigi, Matsumoto, JP;

Shoji Yamada, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 27/085 (2006.01); H01L 21/82 (2006.01); H01L 27/088 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/8213 (2013.01); H01L 21/8234 (2013.01); H01L 27/06 (2013.01); H01L 27/0629 (2013.01); H01L 27/085 (2013.01); H01L 29/78 (2013.01); H01L 29/7804 (2013.01); H01L 29/7815 (2013.01); H01L 21/823481 (2013.01); H01L 27/088 (2013.01); H01L 29/045 (2013.01); H01L 29/0653 (2013.01);
Abstract

A current sensing part that detects overcurrent of a main semiconductor element is arranged on a same silicon carbide base as the main semiconductor element. An isolating part is arranged between the main semiconductor element and the current sensing part. The isolating part has a function of suppressing interference of the main semiconductor element and the current sensing part at the silicon carbide base. The isolating part is constituted by a trench provided a predetermined depth from a front surface of the silicon carbide base. An insulating film is provided in the trench, along inner walls of the trench. A poly-silicon layer is provided on the insulating film. With such a configuration, decreases in breakdown voltage of the current sensing part may be prevented.


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