The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Feb. 17, 2017
Applicant:

Sharp Kabushiki Kaisha, Sakai, Osaka, JP;

Inventors:

Takao Saitoh, Sakai, JP;

Yohsuke Kanzaki, Sakai, JP;

Kazuatsu Ito, Sakai, JP;

Seiji Kaneko, Sakai, JP;

Assignee:

SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1368 (2006.01); H01L 29/786 (2006.01); G02F 1/1362 (2006.01); H01L 21/027 (2006.01); H01L 21/3213 (2006.01); H01L 29/24 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1288 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 21/0273 (2013.01); H01L 21/32139 (2013.01); H01L 27/124 (2013.01); H01L 27/1262 (2013.01); H01L 29/24 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/78618 (2013.01); G02F 2001/136295 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); H01L 29/78693 (2013.01);
Abstract

A method includes a conductive film forming process of forming a conductive filmcovering a gate insulation film IS and a semiconductor film, the gate insulation filmcovering a gate electrodeG and a gate lineG formed on a glass substrateand the semiconductor filmformed on the gate insulation filmwhile overlapping the gate electrodeG, a first etching process of etching the conductive filmand forming a source conductive filmS connected to the semiconductor filmand a drain conductive filmD connected to the semiconductor film, a resist forming process performed after the first etching process and forming a resistR covering the semiconductor film, the source conductive filmS, and the drain conductive filmD, and a second etching process performed after the resist forming process and performing etching for removing the conductive filmwhile using the resistR as a mask.


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