The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jun. 18, 2018
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, Guangdong, CN;
Abstract
The disclosure provides a manufacturing method for a thin film transistor, wherein a manufacturing method for a data line and a source/drain specifically includes: S: respectively manufacturing a data line material film layer and a source/drain material film layer; S: manufacturing a photoresist material film layer; S: performing a half-tone method to etch the photoresist material film layer, forming a photoresist layer, and obtaining a first etching substrate; S: performing a 4-mask process to etch the first substrate, forming the data line on a gate insulating layer, forming the source and the drain on an active layer, and forming a the back channel between the source and the drain to obtain the thin film transistor. The disclosure further provides a manufacturing method for an array substrate, wherein the manufacturing method for an array substrate includes the above-mentioned manufacturing method for a thin film transistor.