The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Feb. 14, 2018
Applicants:
SK Hynix Inc., Gyeonggi-do, KR;
Industry-academia Cooperation Group of Sejong University, Seoul, KR;
Inventors:
Deok-kee Kim, Seoul, KR;
Honggyun Kim, Seoul, KR;
Jae Hong Kim, Gyeonggi-do, KR;
Seo Woo Nam, Gyeonggi-do, KR;
Assignees:
SK hynix Inc., Gyeonggi-do, KR;
INDUSTRY-ACADEMIA COOPERATION GROUP OF SEJONG UNIVERSITY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/07 (2006.01); H01L 23/532 (2006.01); H01L 23/525 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0738 (2013.01); H01L 23/5252 (2013.01); H01L 23/53295 (2013.01);
Abstract
An anti-fuse for a semiconductor device includes an electrode; a gate metal formed to extend from the electrode; a gate oxide layer formed under the gate metal; a semiconductor layer formed under the gate oxide layer to overlap with a center portion of the gate metal; and a first oxide layer formed under the gate metal and the gate oxide layer and on both sides of the semiconductor layer.