The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Feb. 09, 2017
Applicant:

Xilinx, Inc., San Jose, CA (US);

Inventor:

James Karp, Saratoga, CA (US);

Assignee:

XILINX, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 27/02 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0255 (2013.01); H01L 27/0288 (2013.01); H01L 27/0292 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06527 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06568 (2013.01);
Abstract

An example integrated circuit (IC) assembly includes: a substrate, and a first IC die stacked on a second IC die, a stack of the first IC die and the second IC die mounted to the substrate. The first IC die includes an active side, a backside, a plurality of through-silicon vias (TSVs) exposed on the backside, an electrostatic discharge (ESD) circuit on the active side, and metallization on the active side. The metallization includes a first plurality of metal layers disposed on the active side and a second plurality of metal layers disposed on the first plurality of metal layers, each of the second plurality of metal layers thicker than each of the first plurality of metal layers. The metallization further includes a U-route that electrically couples a first TSV of the plurality of TSVs to the ESD circuit, the U-route including a conductive path through the second plurality of metal layers.


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