The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Jan. 10, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yubo Qian, Yongin-si, KR;

Byung Sung Kim, Suwon-si, KR;

Hyeon Uk Kim, Seoul, KR;

Young Gook Park, Seongnam-si, KR;

Chul Hong Park, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76805 (2013.01); H01L 21/76808 (2013.01); H01L 21/76843 (2013.01); H01L 21/76852 (2013.01); H01L 23/5283 (2013.01); H01L 23/53295 (2013.01); H01L 2221/1031 (2013.01);
Abstract

A semiconductor device includes a first conductive element, a first insulating layer and a second insulating layer sequentially disposed on the first conductive element, a conductive via passing through the first insulating layer and the second insulating layer. The conductive via is connected to the first conductive element. The semiconductor device includes a via extension portion disposed in the second insulating layer that extends along an upper surface of the first insulating layer from one side surface of the conductive via, and a second conductive element disposed on the second insulating layer that is connected to the via extension portion.


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