The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Mar. 16, 2017
Applicant:

Zeon Corporation, Chiyoda-ku, Tokyo, JP;

Inventor:

Takaaki Sakurai, Tokyo, JP;

Assignee:

ZEON CORPORATION, Chiyoda-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/31053 (2013.01); H01L 21/31105 (2013.01); H01L 21/3065 (2013.01); H01L 21/30621 (2013.01);
Abstract

A plasma etching method according to the present disclosure includes a first etching step of performing plasma etching of the silicon nitride film on the workpiece by supplying a processing gas containing a gas of a compound represented by a composition formula CHBrFincluding a 2-bromo-3,3,3-trifluoropropene gas, a (Z)-1-bromo-3,3,3-trifluoropropene gas, an (E)-1-bromo-3,3,3-trifluoropropene gas, and/or a 3-bromo-2,3,3-trifluoropropene gas into the processing chamber, such that a ratio CF/F obtained by emission spectrometry of the gas of the compound represented by the composition formula CHBrFis at least 0.33 within the processing chamber.


Find Patent Forward Citations

Sakurai, Takaaki. (2019). Plasma etching method (U.S. Patent No. 10497580). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10497580

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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