The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Sep. 26, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si OT, KR;

Inventors:

Kyungryun Kim, Seoul, KR;

Younghun Seo, Hwaseong-si, KR;

Soobong Chang, Incheon, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/4091 (2006.01); G11C 11/56 (2006.01); G11C 7/10 (2006.01); G11C 11/4093 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 7/106 (2013.01); G11C 11/4093 (2013.01); G11C 11/565 (2013.01); G11C 2211/5642 (2013.01);
Abstract

A semiconductor memory device includes a memory cell that stores multi-bit data, and a bit line sense amplifier that is connected to a bit line of the memory cell and a complementary bit line corresponding to the memory cell in an open bit line structure. The bit line sense amplifier includes a first latch that sequentially senses a first bit and a second bit of the stored multi-bit data and transmits the sensed first bit to a second latch, and a second latch that senses the transmitted bit from the first latch.


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