The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Sep. 05, 2018
Mellanox Technologies, Ltd., Yokneam, IL;
Bar-ilan University, Ramat-Gan, IL;
Elad Mentovich, Tel-Aviv, IL;
Narkis Geuli, Ein HaEmek, IL;
Robert Giterman, Beer-Sheva, IL;
Alexander Fish, Tel-Mond, IL;
Adam Teman, Lausanne, CH;
MELLANOX TECHNOLOGIES, LTD., Yokneam, IL;
BAR-ILAN UNIVERSITY, Ramat Gan, IL;
Abstract
A high-density memory includes: a data write interface, a data read interface, an array of memory cells and level-shifting write drivers. The data write interface inputs data written to the memory. The data read interface outputs data read from the memory. The array of memory cells stores data input at the data write interface and outputs stored data to the data read interface. Each of the memory cells includes at least one low threshold voltage (LVT) read transistor and at least one respective regular threshold voltage (RVT) transistor, so as to obtain high-speed read operations. The level-shifting write drivers supply shifted write wordline voltages to the array, so as to obtain high-speed write operations.