The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jan. 28, 2019
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Neeraj Nepal, Woodbridge, VA (US);
Virginia Wheeler, Alexandria, VA (US);
Charles R. Eddy, Jr., Columbia, MD (US);
Francis J. Kub, Arnold, MD (US);
Travis J. Anderson, Alexandria, VA (US);
Michael A. Mastro, Fairfax, VA (US);
Rachael L. Myers-Ward, Springfield, VA (US);
Sandra C. Hangarter, Gaithersburg, MD (US);
Abstract
A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.