The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 03, 2019

Filed:

Dec. 03, 2015
Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Munehito Chatani, Nagaokakyo, JP;

Hitoshi Seki, Nagaokakyo, JP;

Atsushi Mori, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/00 (2006.01); H01J 37/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0042 (2013.01); C23C 14/0063 (2013.01); C23C 14/0094 (2013.01); H01J 37/3485 (2013.01);
Abstract

A compound thin film is obtained with a high deposition rate and consistent film quality in reactive sputtering. A thin film is formed by performing voltage monitoring control and gas flow rate monitoring control. The voltage monitoring control is control in which a gas flow rate is adjusted such that the value of a target voltage is brought closer to the value of a desired voltage by monitoring the target voltage in a first cycle time. The gas flow rate monitoring control is control in which the desired voltage for the target voltage is changed such that the value of the gas flow rate is brought closer to the value of a desired gas flow rate by monitoring the gas flow rate in a second cycle time.


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