The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Jan. 30, 2019
Electronics and Telecommunications Research Institute, Daejeon, KR;
Tae Wook Kang, Daejeon, KR;
Jae-Jin Lee, Daejeon, KR;
Kwang Il Oh, Daejeon, KR;
Sung Eun Kim, Daejeon, KR;
Sukho Lee, Daejeon, KR;
Kyuseung Han, Daejeon, KR;
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE, Daejeon, KR;
Abstract
The inventive concept relates to a semiconductor device including a CMOS circuit and an operation method thereof. A semiconductor device according to an embodiment of the inventive concept includes a semiconductor circuit, a controller, and a voltage generator. The semiconductor circuit operates at a drive voltage to reduce the delay time between input and output as the temperature increases. The controller determines the malfunction of the CMOS circuit based on the difference between the source-drain current of the PMOS transistor and the source-drain current of the NMOS transistor as the temperature changes. The voltage generator generates or adjusts a body-bias voltage applied to the PMOS transistor or the NMOS transistor based on a malfunction determination of the controller. According to the inventive concept, malfunctions and performance deterioration occurring in a CMOS circuit operating at a low voltage may be reduced.