The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2019

Filed:

Dec. 27, 2017
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Rei Hashimoto, Edogawa, JP;

Shinji Saito, Yokohama, JP;

Tsutomu Kakuno, Fujisawa, JP;

Kei Kaneko, Yokohama, JP;

Yasunobu Kai, Yokohama, JP;

Naotada Okada, Yokohama, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/34 (2006.01); H01S 5/12 (2006.01); H01L 33/00 (2010.01); H01L 21/02 (2006.01); H01S 5/183 (2006.01); H01S 5/10 (2006.01); H01S 5/18 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/3402 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02642 (2013.01); H01L 33/007 (2013.01); H01S 5/105 (2013.01); H01S 5/124 (2013.01); H01S 5/1231 (2013.01); H01S 5/183 (2013.01); H01S 5/3401 (2013.01); H01L 21/02392 (2013.01); H01L 21/02395 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02488 (2013.01); H01L 21/02513 (2013.01); H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 21/02639 (2013.01); H01L 21/02647 (2013.01); H01S 5/18 (2013.01); H01S 5/34313 (2013.01);
Abstract

A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.


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