The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Apr. 21, 2016
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Yasuhiro Nagatomo, Kawasaki, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); G01B 9/02 (2006.01); H01S 5/068 (2006.01); H01S 5/187 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); G01B 9/02015 (2013.01); G01B 9/02091 (2013.01); H01S 5/068 (2013.01); H01S 5/187 (2013.01); H01S 5/18316 (2013.01); H01S 5/18366 (2013.01); H01S 5/18369 (2013.01); H01S 5/18377 (2013.01);
Abstract
The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector (), an active layer () disposed on the first reflector (), a beam portion () disposed over the active layer () with an air gap therebetween, and a second reflector () disposed on the beam portion (). The second reflector () has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion () has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.