The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Nov. 07, 2016
Boe Technology Group Co., Ltd., Beijing, CN;
Peking University, Beijing, CN;
Xuelei Liang, Beijing, CN;
Guanbao Hui, Beijing, CN;
Jiye Xia, Beijing, CN;
Fangzhen Zhang, Beijing, CN;
Boyuan Tian, Beijing, CN;
Qiuping Yan, Beijing, CN;
Lianmao Peng, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
The present disclosure provides a thin-film transistor having a plurality of carbon nanotubes in its active layer, its manufacturing method, and an array substrate. The manufacturing method as such comprises: forming an insulating layer to at least substantially cover a channel region of the active layer between a source electrode and a drain electrode of the thin-film transistor, wherein the insulating layer is configured to substantially insulate from an environment, and have substantially little influence on, the plurality of carbon nanotubes in the active layer.