The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Mar. 01, 2017
Applicant:
Palo Alto Research Center Incorporated, Palo Alto, CA (US);
Inventors:
Ping Mei, San Jose, CA (US);
Robert A. Street, Palo Alto, CA (US);
Gregory L. Whiting, Menlo Park, CA (US);
Sivkheng Kor, San Jose, CA (US);
Steven E. Ready, Los Altos, CA (US);
Assignee:
PALO ALTO RESEARCH CENTER INCORPORATED, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 27/28 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0022 (2013.01); H01L 27/283 (2013.01); H01L 51/105 (2013.01);
Abstract
A method and system utilizes ink jetting or printing of surface work function modification material or solution to form modified p-type and/or n-type electrodes. The proposed method is suitable for making complementary OTFT circuits in roll-to-roll fabrication environment.
Quick Actions:
Mei, Ping. (2019). Selective surface modification of otft source/drain electrode by ink jetting f4tcnq (U.S. Patent No. 10490746). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10490746
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile