The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Jun. 16, 2017
Imec Vzw, Leuven, BE;
Bogdan Govoreanu, Hulshout, BE;
IMEC vzw, Leuven, BE;
Abstract
In one aspect, a resistive switching memory device includes a first electrode and a second electrode having interposed therebetween a first inner region and a second inner region, where the first and second inner regions contacting each other. The first inner region includes one or more metal oxide layers and the second inner region consists of a plurality of layers, where each of the layers of the second inner region is an insulating, a semi-insulating or a semiconducting layer. The second inner region comprises one or more layers having a stoichiometric or off-stoichiometric composition of a material selected from the group consisting of SiGe, SiN, AlO, MgO, AIN, HfO, HfSiO, ZrO, ZrSiO, GdAlO, DyScO, TaOand combinations thereof. The second inner region comprises one or more silicon-containing layers, such that one of the one or more silicon-containing layers contacts the first inner region.