The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Aug. 10, 2017
Applicant:
Soraa, Inc., Freemont, CA (US);
Inventors:
Aurelien J. F. David, San Francisco, CA (US);
Mark P. D'Evelyn, Freemont, CA (US);
Christophe A. Hurni, Freemont, CA (US);
Nathan Young, Freemont, CA (US);
Michael J. Cich, Freemont, CA (US);
Assignee:
SORAA, INC., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/08 (2010.01); H01L 33/32 (2010.01); H01L 33/04 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01); H01L 33/04 (2013.01); H01L 33/08 (2013.01); H01L 33/32 (2013.01); H01L 33/145 (2013.01);
Abstract
A method of forming a III-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.