The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Jan. 31, 2018
Hrl Laboratories, Llc, Malibu, CA (US);
Sevag Terterian, Lake Balboa, CA (US);
Terence J. DeLyon, Newbury Park, CA (US);
Bor-An Clayton Tu, Thousand Oaks, CA (US);
Hasan Sharifi, Agoura Hills, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
Methods of hydrogen atom incorporation and of passivation of grain boundaries of polycrystalline semiconductors use a low temperature, pulsed plasma to incorporate hydrogen atoms into the grain boundaries of polycrystalline semiconductor materials in a controlled manner. A hydrogen-passivated polycrystalline IR detector has hydrogen atoms incorporated into grain boundaries of a polycrystalline Group III-V compound semiconductor detector element and a dark current density characteristic that is lower than the dark current density characteristic of a polycrystalline IR detector without the incorporated hydrogen atoms.