The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Oct. 08, 2012
Applicant:
Soitec, Crolles, FR;
Inventors:
Rainer Krause, Mainz-Kostheim, DE;
Bruno Ghyselen, Syssinet, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 21/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/0687 (2012.01); H01L 31/0693 (2012.01); H01L 31/0725 (2012.01);
U.S. Cl.
CPC ...
H01L 31/184 (2013.01); H01L 21/0262 (2013.01); H01L 21/02538 (2013.01); H01L 21/02631 (2013.01); H01L 31/03044 (2013.01); H01L 31/03046 (2013.01); H01L 31/0687 (2013.01); H01L 31/0693 (2013.01); H01L 31/0725 (2013.01); H01L 31/1844 (2013.01); H01L 31/1848 (2013.01); H01L 31/1892 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract
A semiconductor device, in particular a solar cell is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds. To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates.