The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
Apr. 10, 2017
Ricoh Company, Ltd., Tokyo, JP;
Shunichi Sato, Miyagi, JP;
Nobuhiko Nishiyama, Kanagawa, JP;
RICOH COMPANY, LTD., Tokyo, JP;
Abstract
A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p-type (Al)GaInAs layer, the n-type layer being an n-type InP layer, an n-type GaInP layer having a tensile strain with respect to InP or n-type Ga(In)PSb layer having a tensile strain with respect to InP.