The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2019
Filed:
May. 07, 2014
Applicant:
SK Innovation Co., Ltd., Seoul, KR;
Inventors:
Jin Hyock Kim, Daejeon, KR;
Hye Ri Kim, Daejeon, KR;
Sung Jae An, Daejeon, KR;
Jin Woong Kim, Daejeon, KR;
Assignee:
SK Innovation Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/0749 (2012.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 31/0749 (2013.01); H01L 31/18 (2013.01); Y02E 10/541 (2013.01); Y02P 70/521 (2015.11);
Abstract
Provided is a method of fabricating a CIGS absorption layer which, may have improved material utilization and productivity and have excellent thin film uniformity even in a large area by depositing and heat treating a precursor having a multilayer structure by a sputtering method using a compound, target of InGaSez(IGS) and CuSe(CS).